Metrology | Nanosystem Fabrication Facility, HKUST

1 Resolution
0.6 nm (Accelerating voltage 15 kV, WD*1 = 4 mm, Photo magnification x270,000)
0.7 nm (Accelerating voltage2 1 kV, WD1 = 1.5 mm, Photo magnification x200,000)
The resolution shall be measured on a resolution measurement specimen (Gold particle on carbon).
*1 WD (Working Distance)
*2 Deceleration mode
2 Magnification
High magnification mode	:	x100 to x2,000,000
Low magnification mode	:	x20 to x20,000
NOTE: The magnification range is varied depending on WD and accelerating voltage.
The magnification is stipulated at 127 mm x 95 mm of display size (Photo magnification).
3 Electron optics system
(1) Accelerating voltage (Vacc)	:	0.50 to 30.00 kV (0.01 kV steps)
(2) Landing voltage (Vland)	:	0.01 to 20.00 kV (0.01 kV steps)
(3) Decelerating voltage	:	Maximum -3.50 kV
(4) Detectors	:	Scintillator/Photo multiplier detector
		Upper detector (BXB filter detector)
		Lower detector (Chamber SE/BSE detectors)
4 Specimen Stage
(1) Drive method	:	5-axis motor drive
(2) Movable range	:	X-axis 0 to 110 mm
		Y-axis 0 to 110 mm
		Z-axis (WB) 1.5 to 40 mm
		R-axis (Rotation) 360° continuous
		T-axis (Tilt) -5° to 70°
(3) Maximum specimen size	:	100 mm diameter
(4) Maximum specimen height	:	36mm (Including the specimen holder and specimen stub)
(5) Specimen weight	:	Air lock method
(6) Specimen exchange	:	Control via GUI
(7) Control		SEM MAP function
		Postion memory function
		Eucentric rotation function
		Eucentric tilt function [Specimen height: 36 mm * Including the specimen holder]
		Rotation assist function

Magnification	:	10x-100,000x
Specimen Stage	:	X: 40 mm, Y: 35 mm, Rotation: 0-360 degree
Stage Control	:	Camera navigation System, 3 axes (X, Y, Rotation) computer controlled
Max. Sample Size	:	80 mm (dia.), 50 mm (thickness)
Vacuum Mode	:	HV, LV
Signal Detector	:	BSE detector, High-Sensitivity Low- Vacuum SE detector
Image Signal	:	BSE, SE or Mix (BSE + SE)
Image Adjustment	:	Auto start, Auto focus, Auto brightness, Camera
Image Data Saving	:	2,560 x 1,920, 1,289 x 960, 640 x 480 pixels
Image Format	:	BMP, TIFF, JPEG

For single point measurement of wafer thickness, Aluminum film thickness and sheet resistance of metal
Wafer Diameter	:	3”, 4”, 5” and 6”
Substrate Thickness	:	250-700 µm
Sheet Resistance	:	1 to 1999 Ω/sq.
Minimum Metal Film Thickness	:	100 Ȧ

Measurement of roughness, waviness, step height on a surface
Vertical Resolution	:	1 Å (Max. vertical range 13μm), 25 Å (Max vertical range 300μm)
Horizontal Resolution	:	0.01 μm at 1μm/s scan speed
Max. Scan Length	:	60 mm, 2-D scan only
Scan Speed	:	1 μm/s to 25 mm/s
Stylus Force	:	1-100 mg
Stylus Radius	:	12.5 μm
Display Magnification	:	60-240x

Measurement of roughness, waviness, step height on a surface
Vertical Resolution	:	1 Å (Max. vertical range 13μm), 25 Å (Max vertical range 300μm)
Horizontal Resolution	:	0.025 μm
Max. Scan Length	:	150 mm, 2-D scan only
Scan Speed	:	2 μm/s to 25 mm/s
Stylus Force	:	0.5-50 mg
Stylus Radius	:	2 μm
Display Magnification	:	60-240x

Measurement of roughness, waviness, step height on a surface
Stylus Force	:	1 to 15mg with LIS 3 sensor
Stylus Radius	:	2.5 μm and 12.5 μm
Scan Length Range	:	55mm
Sample Stage	:	Manual Θ, 360° rotation, manual leveling, auto X-Y 150 mm travel, 1 μm repeatability, 0.5 μm resolution
Data Points Per Scan	:	60,000 maximum
Max. Sample Thickness	:	Up to 100 mm
Max. Wafer Size	:	150 mm
Step Height Repeatability	:	6A, 1 sigma on 1μm step
Vertical Range	:	524 μm standard
Vertical Resolution	:	1A max. (at 6.55 μm range)

Range from 0.001 to 800k Ohm per square
Single point, 5 points or external PC mapping measurement
3" to 6" wafer capability
Various probe heads selection

Range from 0.001 to 800k Ohm per square
150 mm probe stand
Keithley 2400 source meter
Tungsten Carbide and Osmium probe heads
Tip radius	:	0.0016 inches
Spring Pressure	:	85 grams

Single film thickness measurement on silicon substrate:
Silicon dioxide, Silicon nitride, positive/negative photo resist and polymide
Double layers measurement on silicon substrate :
Silicon nitride on silicon dioxide, Polysilicon on silicon dioxide, Amorphous silicon on silicon dioxide, Negative/positive resist on silicon oxide
Standard visible system with Lens in 10x magnification
Measuring light spot size	:	15 μm (Model 4150)
Measuring light spot size	:	25 μm (Model 3000)
Automatic focusing and preset pattern of measurement point locations (Model 4150)

Measure the optical constants: refractive Index, extinction coefficients and film Thickness for different materials
Wavelength	:	370 nm to 1690 nm, ~ 580 wavelengths
All wavelengths are acquired simultaneously
Focused beam diameter in ~200 μm (collimated)
Spectral resolution in 1.6 nm, 5 nm bandwidth
Test Base fixed angle of 66°, horizontal sample stage for 100 mm wafer
Automated z-height alignment

Non-contact AFM imaging to investigate and analyze a sample surface
Supports up to 6" wafer
100 µm × 100 µm XY scan range
Up to 12 µm Z scan range
Radius of probe tip size, 10 nm
Enhanced acoustic enclosure
Fully motorized XY stage travels entire 150 mm × 150 mm

Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate
Measure 1-D stress and produce 3-D topographical profile
For wafer flatness and Pattern measurement
Various of stress constant
Wafer size	:	2" to 8"
Thickness Limit	:	less than 11 mm
Statistical process control and spreadsheet compatibility
Automatic segmentation calculation

Keyence VK-X260K 3D Laser Confocal Microscope provides non-contact, nanometer-level profile, roughness, and film thickness data on any material.
Light source	:	408nm violet laser source White light source
Total magnification	:	Up to 28000x
Optical microscope	:	Pinhole confocal optical system 4 Objectives (10X, 20X, 50X & 150X)
Light receiving element	:	16-bit photomultiplier
Scanning method	:	Automatic upper/lower limit setting High-speed light intensity optimization (AAGII) Poor reflected light intensity supplement (Double Scan)
Stage	:	Manual XY Stage 70mm×70mm Micrometric motorized Z translation
Resolution	:	1nm lateral resolution 0.5nm Z-axis movement of objective lenses
Observation image	:	Super-high-resolution color CCD image 16-bit laser color confocal image Confocal + ND filter optical system C-laser differential interference image
Sample size	:	Up to 5" Maximum sample height 28mm

Probing Stage:
Sample size	:	Up to 152.4 mm (6 inch)
Probe:
Probe Tip Holder	:	Triaxle cable Current leakage: <50 fA
Probe Tip diameter	:	20 μm
Stereo Microscope:
Optical Magnification	:	20X – 400X
Keysight B1500A Semiconductor Device Parameter Analyzer:
Current-Voltage (IV) measurement with 4 HRSMUs (High Resolution Source Monitor Units)
Current range	:	± 100 mA, measuring resolution 1 fA, sourcing resolution 5 fA
Voltage range	:	± 100 V, measuring resolution 0.5 μV, sourcing resolution 25 μV

測試模組