熱加工與注入模組
CF-3000 Implanter 離子注入機（IMP-3000）
潔凈/半潔凈
Specifications
| Dose Energy | : | 10 to 150 keV |
|---|---|---|
| Max. Dose (ion/cm2 ) | : | 1015 |
| Processing | : | Arsenic, Phosphorus, Boron & BF2 implant |
LPCVD （CVD-A2至CVD-A4；CVD-B1至CVD-B4）
潔凈/半潔凈
Specifications
| Each deposition has its programmed flow of gases compositions, temperature and pressure |
| ASM LB45 LPCVD Furnace: |
| Polysilicon, Amorphous silicon, N-doped Amorphous Silicon, Silicon Germanium, Silicon Nitride, Low Temperature Oxide (LTO), Phosphorous Silicon Glass (PSG) |
Diff. Furnace（DIF-A1, DIF-C1至DIF-C4；DIF-D1至DIF-D3, DIF-F1）
潔凈/半潔凈/非常規
Specifications
| Operating temperature | : | 400 to 1150 oC |
|---|---|---|
| Processing | : | Dry & Wet Oxidation, N/P diffusion, Forming Gas annealing and Drive in |
STS PECVD （CVD-P2）
非常規
Specifications
| Processing | : | Silicon Dioxide, Silicon Nitride |
|---|---|---|
| Silicon Oxynitride | ||
| Amorphous Silicon |
Oxford ALD （CVD-ALD）
非常規
Specifications
| Thermal and plasma ALD | ||
|---|---|---|
| Processing | : | Aluminum Oxide (Al2O3) |
| Zirconium Oxide (ZrO2) | ||
CNT PECVD （CVD-CNT）
非常規
Specifications
| Frequency | : | 2455 MHz |
|---|---|---|
| Processing | : | CNT growth |
| Temperature | : | 900 oC |
RTP-600S （DIF-R1）
潔凈
Specifications
| Steady-state temperature stability | : | ±2℃ in the range of 250-1150℃ |
|---|---|---|
| Heating rate | : | 0-200℃/sec |
| Cooling rate | : | 150℃ max/sec |
| Steady state time | : | 1-600 sec |
AG610 RTP （DIF-R2）
半潔凈
Specifications
| Operating temperature in the range of 400℃ to 1000℃ | ||
|---|---|---|
| Ion implantation annealing | ||
| Silicide formation | ||
| Nitridation of thin gate, dielectrics & silicide | ||
| PSG/BPSG reflow |
AW610 RTP （DIF-R3）
非常規
Specifications
| Wafer handling | : | Manual loading of wafer into the oven, single wafer processing |
|---|---|---|
| Wafer sizes | : | Small samples and 2", 4" and 6" wafers |
| Ramp up rate | : | Programmable, 10℃ to 80℃ per second |
| Ramp down rate | : | Programmable, 10℃ to 80℃ per second |
| Operating temperature in the range of 250℃ to 800℃ | ||
| Ion implantation annealing | ||
| Silicide formation, nitridation of thin gate, dielectrics & silicide, PSG/BPSG reflow | ||