乾法刻蝕與濺射模組
Poly Etcher 電感耦合等離子多晶硅刻蝕機(DRY-Poly)
潔凈/半潔凈
Specifications
Remark | : | For Semi-Clean process, please contact NFF (CWB) technicians. |
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Gases available | : | HBr, Cl2, O2, N2, He & Ar |
RF power source | : | 1x 1000W(max) at 13.56MHz for Coil electrode, 1x 300W(max) at 13.56MHz for Platen electrode |
Electrode coolant system | : | 20 oC |
High speed turbo molecular pump | : | pumping speed of 1000 L/s at 36000 rpm |
Fully automatic loadlock transfer system | ||
Substrate size | : | 4” single wafer |
Polysilicon etch | ||
Minimum line/space | : | 0.5 µm |
Low rate polysilicon etch E/R | : | ~ 900 Ȧ/min |
Selectivity to oxide | : | 13:1 |
Selectivity to photoresist | : | 12.5:1 |
Uniformity | : | 5% |
Normal rate polysilicon etch | ||
E/R | : | >1800 Ȧ/min |
Selectivity to photoresist | : | 2.5:1 |
Uniformity | : | 5% |
GaN Etcher 電感耦合等離子氮化鎵刻蝕機(DRY-GaN)
非常規
Specifications
Gases available | : | BCl3, Cl2, CH4, SF6, O2, He & Ar |
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RF power source | : | 1x 1000W(max) at 13.56MHz for Coil electrode, 1x 300W(max) at 13.56MHz for Platen electrode |
Electrode coolant system | : | 5 to 30 oC |
High speed turbo molecular pump | : | pumping speed of 1000 L/s at 36000 rpm |
Fully automatic loadlock transfer system | ||
Substrate size | : | 2", 4" or 6” single wafer or specimens |
GaN etch | ||
E/R | : | ~5000 Ȧ/min |
Selectivity to oxide | : | 10:1 |
Sapphire etch | ||
E/R | : | ~700 Ȧ/min |
Selectivity to oxide | : | 1.5:1 |
DRIE Etcher #1 電感耦合等離子深硅刻蝕機(DRY-Si-1)
潔凈
Specifications
Gases available | : | C4F8, SF6, O2, N2, He & Ar |
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RF power source | : | 1x 1000W(max) at 13.56MHz for Coil electrode, 1x 300W(max) at 13.56MHz for Platen electrode |
Electrode coolant system | : | 5 to 30 oC |
High speed turbo molecular pump | : | pumping speed of 1000 L/s at 36000 rpm |
Fully automatic loadlock transfer system | ||
Substrate size | : | 4" wafer |
Silicon etch | ||
Minimum Line/Space | : | 0.5 µm |
Low Rate Silicon Etch E/R | : | From 500 Ȧ/cycle |
Normal Rate Silicon Etch E/R | : | Up to 2 µm/min |
Selectivity to Photoresist | : | >50:1 |
Selectivity to Oxide | : | >80:1 |
Uniformity | : | 7% |
DRIE Etcher #2 電感耦合等離子深硅刻蝕機 (DRY-Si-2)
潔凈/半潔凈
Specifications
Gases available | : | C4F8, SF6, O2, N2, He & Ar |
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RF power source | : | 1x 3600W(max) at 13.56MHz for Primary Source 1x 3000W(max) at 13.56MHz for Secondary Source 1x 200W(max) at 13.56MHz for Platen electrode 1x 200W(max) at 300-500kHz for Platen electrode |
Electrode coolant system | : | -20 to 40 oC |
High speed turbo molecular pump | : | pumping speed of 2350 L/s at 25000 rpm |
Fully automatic loadlock transfer system | ||
Substrate size | : | 4" wafer |
Silicon etch | ||
Minimum Line/Space | : | 0.5 µm |
Aspect Ratio | : | Up to 60:1 |
Low Rate Silicon Etch E/R | : | From 0.7µm/min (700 Ȧ/Loop) |
Normal Rate Silicon Etch E/R | : | 2 µm/min |
Fast Rate Silicon Etch E/R | : | 18 µm/min |
Selectivity to Photoresist | : | From 12:1 to 250:1 |
Selectivity to Oxide | : | From 24:1 to 500:1 |
Uniformity | : | <5% |
DRIE Etcher #3 電感耦合等離子深硅刻蝕機 (DRY-Si-3)
非常規
Specifications
Gases available | : | C4F8, SF6, O2, N2, He & Ar |
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RF power source | : | 1 x 1000W(max) at 13.56MHz for Coil electrode, 1 x 300W(max) at 13.56MHz for Platen electrode |
Electrode coolant system | : | 20 oC |
High speed turbo molecular pump | : | pumping speed of 1000 L/s at 36000 rpm |
Fully automatic loadlock transfer system | ||
Substrate size | : | 4" wafer |
Silicon etch | ||
Minimum Line/Space | : | 1 µm |
Low Rate Silicon Etch E/R | : | 1 µm/min |
Normal Rate Silicon Etch E/R | : | Up to 2 µm/min |
Selectivity to Photoresist | : | >50:1 |
Selectivity to Oxide | : | >100:1 |
Uniformity | : | 7% |
AOE Etcher 電感耦合等離子氧化物刻蝕機(DRY-AOE)
潔凈
Specifications
Gases available | : | C4F8, CF4, CHF3, O2, N2, H2, He & Ar |
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RF power source | : | 1x 3000W(max) at 13.56MHz for Coil electrode, 1x 600W(max) at 13.56MHz for Platen electrode |
Electrode coolant system | : | -5 to 30 oC |
High speed turbo molecular pump | : | pumping speed of 2000 L/s at 48000 rpm |
Fully automatic loadlock transfer system | ||
Substrate size | : | 4" single silicon or quartz wafer |
Silicon Oxide etch | ||
Minimum Line/Space | : | 0.5 µm |
Silicon Oxide Etch E/R | : | AOE_PRD = 2300 Ȧ/min; AOE_PRB = 3000 Ȧ/min |
Selectivity to Photoresist | : | >4:1 |
Selectivity to Polysilicon | : | >15:1 |
Uniformity | : | 7.5% |
PS210 Asher 光刻膠刻蝕機(DRY-PR-1)
潔凈
IPC 3000 Asher #1, #2 and #4 光刻膠刻蝕機(DRY-PR-2, DRY-PR-3, DRY-PR-5)
潔凈/半潔凈/非常規
IPC 3000 Asher #3 光刻膠刻蝕機(Dry-PR-4)
非常規
Oxford RIE Etcher 反應離子刻蝕機(DRY-RIE-1)
非常規
Specifications
Gases available | : | CHF3, SF6, O2, CF4, Ar, N2, He & H2 |
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RF power source | : | 500W at 13.56MHz |
Huber electrode coolant system | : | -40 to 200 oC |
Substrate size | : | 4", up to 3 wafers per run or specimen |
Silicon Dioxide Etch | ||
E/R | : | ~363 Ȧ/min for LTO |
E/R | : | ~352 Ȧ/min for thermal oxide |
Selectivity to photoresist | : | 2.6:1 |
Selectivity to Silicon Nitride | : | 0.8:1 |
Selectivity to Silicon | : | 6.7:1 |
Uniformity | : | 3.6% |
Silicon Nitride Etch | ||
E/R | : | ~810 Ȧ/min |
Selectivity to photoresist | : | 1.5:1 |
Selectivity to Silicon Dioxide | : | 2.1:1 |
Selectivity to Silicon | : | 5.4:1 |
Uniformity | : | 5.8% |
AST Metal Etcher 刻蝕機 (DRY-Metal-1)
半潔凈
Specifications
Chlorine & Fluorine based barrel type system for etching aluminum | ||
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Gases available | : | Cl2, BCl3, CF4, CHF3, He, Ar, O2 & N2 |
RF power source | : | 1000W(max) at 13.56MHz |
Bias power source | : | 1000W(max) at 13.56MHz |
Substrate size | : | 4" wafers |
Aluminum Etch | ||
Al etch rate | : | 1700 Ȧ/min |
PR etch rate | : | 1000 Ȧ/min |
SiOx etch rate | : | 300 Ȧ/min |
XeF2 Silicon Etcher 硅刻蝕機(DRY-XeF2)
半潔凈
Trion RIE Etcher 電感耦合等離子/反應離子刻蝕機(DRY-Trion)
半潔凈
Specifications
Gases available | : | CHF3, SF6, O2, CF4, Ar, N2, He and H2 |
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ICP power source | : | 600W (max) at 13.56MHz |
RF power source | : | 600W (max) at 13.56MHz |
Electrode coolant system | : | 0 to 30 oC |
Substrate size | : | 4", up to 3 wafers per run or specimens |
Silicon Dioxide Etch | : | ~500 Ȧ/min |
Silicon Nitride Etch | : | ~850 Ȧ/min |
Oxford Aluminum Etcher 鋁刻蝕機 (DRY-Metal-2)
半潔凈
Specifications
Gases available | : | Cl2, BCl3, HBr, CF4, SF6, O2 and Ar |
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RF power source | : | 1 x 3000W (max) at 13.56MHz for coil electrode |
: | 1 x 300W (max) at 13.56MHz for platen electrode | |
Electrode coolant system | : | 5 to 60 oC |
High speed turbo molecular pump | : | pumping speed of 1250 L/s at 37800 rpm |
Fully automatic loadlock transfer system | ||
Substrate size | : | 4" wafer |
Aluminum / Aluminum-Si etch | ||
Minimum line / space | : | 0.5 µm |
High rate Aluminum etch E/R | : | 3000 Ȧ/min |
Normal rate Aluminum etch E/R | : | 1800 Ȧ/min |
Selectivity to Photoresist | : | > 2:1 |
Selectivity to Oxide | : | > 10:1 |
Uniformity | : | 5% (etch from edge to center) |
NFF RIE Etcher 反應離子刻蝕機 (DRY-RIE-2)
潔凈/半潔凈
Oxford GaN-InP Etcher 電感耦合等離子氮化鎵 / 磷化銦刻蝕機 (DRY-GaN-2)
半潔凈
Specifications
Gases available | : | Cl2, BCl3, CH4, H2, N2, SF6, O2, He and Ar |
---|---|---|
RF power source | : | 1 x 3000W (max) at 13.56MHz for coil electrode |
: | 1 x 600W (max) at 13.56MHz for platen electrode | |
Electrode coolant system | : | -10 to 200 oC |
High speed turbo molecular pump | : | pumping speed of 1280 L/s at 39000 rpm |
Fully automatic loadlock transfer system | ||
Substrate size | : | 2", 4" or 6" single full wafer |
GaN Etch | ||
E/R: | : | ~6000 Ȧ/min |
Selectivity to Oxide | : | 9:1 |
InP Etch | ||
E/R: | : | ~6000 Ȧ/min |
Selectivity to Oxide | : | 10:1 |
Critical Point Dryer 臨界點乾燥儀 (CPD-1)
半潔凈
Specifications
Tousmis Automegasamdri®-915B, Series B Critical Point Dryer | ||
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• Automatic Supercritical Point Dryer |
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• All internal surfaces are inert to CO2 and ultra pure alcohols |
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• 0.08µm internal filtration system delivers clean filtered LCO2 to process chamber |
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• Small samples up to 6" wafer |
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• Up to five wafers per single process |
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Diener Plasma Cleaner 等離子清洗機 (DRY-Cleaner) (只供做微流體工藝的用戶使用)
非常規
Varian 3180 Sputter 濺射系統(SPT-3180)
半潔凈
Specifications
Gases available | : | Ar & N2 |
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DC sputtering power source | : | 3 x 12KW |
RF back sputtering power source | : | 600W at 13.56MHz |
Fully automatic wafer handling system | ||
Substrate size | : | 4" wafer |
Chamber pressure | : | 5 x 10-7 torr |
Target available | : | Mo, Pure Al, Al-Si & Ti (Installation of target might be needed. For details, please contact NFF (CWB) staff.) |
Sputtering rate ( Ȧ/sec) | ||
~160 Ȧ/sec for pure Al
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~180 Ȧ/sec for Al/Si (1%)
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~40 Ȧ/sec for Ti
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~160 Ȧ/sec for Mo |
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No Photoresist on wafer is allowed
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CVC-601 Sputter 濺射系統(SPT-CVC)
非常規
Specifications
Gases available | : | Ar & N2 |
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DC sputtering power source | : | 1 x 3 KW |
RF sputtering power source | : | 1200W at 13.56MHz |
Chamber pressure | : | 5 x 10-7 torr |
Substrate size | : | 2", 4"& 6" wafers or 4" square glass substrate |
Target available | : | Cu, TiW & Au |
Target available on request | : | Ti, Cr & Al-Si |
Sputtering rate (Ȧ/min): | ||
~500 Ȧ/min for Al-Si
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~175 Ȧ/min for TiW
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~160 Ȧ/min for Au
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~1000 Ȧ/min for Cu
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No Photoresist on wafer is allowed
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ARC-12M Sputter 濺射系統(SPT-ARC)
非常規
NFF-CY1 Sputterer 濺射系統 (SPT-CY1)
半潔凈
Specifications
Gases available | : | Ar, O2 & N2 |
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DC sputtering power source | : | 1 x 500W |
RF sputtering power source | : | 1 x 500W (Currently unavailable) |
Chamber pressure | : | 5 x 10-6 torr |
Substrate size | : | 2", 4" wafer or square glass, or specimens |
Target available | : | Al, Ti, Cr, Al-Si, Ni, Mo, dielectric targets (such as TiN, TaN will be available when RF gun is ready) |
Cooke Evaporator #1 電子束蒸發系統(SPT-EV1)
半潔凈(SPT-EV1))
Specifications
Gases available | : | N2 |
---|---|---|
E-beam power source | : | 1x 3KW |
Chamber pressure | : | 8 x 10-7 torr |
Substrate size | : | 2" or 4" wafers |
Source available (in Phase II) | : | Al, Ni, Mo, Ti, Cr |
No Photoresist on wafer is allowed for the Cook Evaporation System
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Cooke Evaporator #2 電子束蒸發系統(SPT-EV2)
非常規(SPT-EV2)
AST 600EI Evaporator 電子束蒸發系統(SPT-AST600)
非常規
AST 450I Evaporator 電子束蒸發系統(SPT-AST450)
非常規
Edward Sputter (Au) for SEM 鍍膜機
非常規
NSC3000 Sputter 濺射系統(SPT-NSC3000)
半潔凈