濕法刻蝕與化學機械研磨模組

濕化工藝臺A、B、C、D、E、F、G及H
潔凈/半潔凈/非常規

WET-A1 to WET-A3, WET-B1 to WET-B3, WET-C1 to WET-C3, WET-D1 to WET-D4,
WET-E1 to WET-E4, WET-F1 to WET-F3, WET-G1 to WET-G2, WET-H1 to WET-H3

Specifications
Wet processing : Silicon Etch using KOH / TMAH (25%)
Photoresist Strip / ITO Etch
Aluminum Etch / Pad Oxide Etch
Oxide / Nitride Etch
Wafer Cleaning (RCA)
Wafer Cleaning (Piranha Clean)
Solvent Cleaning

Wetstation A and B

Wetstation C and D

Wetstation E and F

Wetstation G and H
 
濕化工藝臺M（WET-M1 至 WET-M3）
非常規
Wetstation M (WET-M1 to WET-M3)
Specifications
MS2001 Resist Stripper
FHD5 Manual Developer
Quick Dump Rinsers
Small samples up to 6”
 
濕化工藝臺O（WET-O1）
非常規
Wetstation O (WET-O1)
Specifications
Hydrochloric Acid Etch Prior E-Beam Metallization
DI Water Gun for rinse
N2 Gun for dry
Small samples up to 6"
 
濕化工藝臺W、X、Y及Z（WET-W1至WET-W2；WET-X1至 WET-X2；WET-Y1至WET -Y2；WET-Z1至WET-Z2）
潔凈/半潔凈/非常規
Wetstation W, X, Y and Z (WET-W1 to WET-W2, WET-X1 to WET-X2, WET-Y1to WET-Y2, WET-Z1 to WET-Z2)
Specifications
MS2001 resist stripper
FHD5 manual developer
Quick dump rinsers
Small samples up to 6"
 
USI Wafer Cleaner 晶片清洗機（CMP-2）
潔凈
USI Wafer Cleaner (CMP-2)
Specifications
Wafer surface scrubbing for pre-CMP and post -CMP process
Fully automatic microprocessor control
Completely enclosed chamber for washing, rinsing and drying
4" wafer cleaning
9" brush travel
Silicon Grinder 硅片減薄機 (CMP-3)
半潔凈
Silicon Grinder (CMP-3)
Specifications
Mechanical grind for Silicon Oxide or Silicon using diamond wheel
>5mm2 to 4" wafer size
100-800um wafer thickness
 
 
 
Buehler Polisher #1 硅片拋光機(CMP-4)
半潔凈
Buehler Polisher #1 (CMP-4)
Specifications
Polished for Silicon, Silicon Oxide or Silicon Nitride
>5mm2 to 4" wafer size
100-800um wafer thickness
 
 
 
Buehler Polisher #2 銅拋光機 (CMP-5)
非常規
Buehler Polisher #2 (CMP-5)
Specifications
Polished for Copper, CNT, Silicon, Silicon Oxide or Silicon Nitride
>5mm2 to 4" wafer size
100-800um wafer thickness
 
 
 
GnP CMP 拋光機 (CMP-6)
潔凈
GnP CMP (CMP-6)
Specifications
Equipment model  :  POLI-400L
Polishing materials : Silicon dioxide or Polysilicon
Sample Size : 1"x1" or 4"
Wafer Thickness : 400-550 µm
Wafer Carrier : Membrane style with floating ring
Polishing platen and wafer carrier speed range : 30-200 rpm
Oscillating Arm Pad Conditioning
 
Copper Electroplating 銅電鍍設備 (EP-1)
非常規
Copper Electroplating (EP-1)
Specifications
Copper Electroplating on 2" single side or 4" single/double sides wafer size
Ready for Copper Electroplating to fill the small trench 300-550um wafer thickness